@conference {{\'A}guas2001,
	title = {Hydrogenated amorphous silicon / ZnO shottky heterojunction for position sensitive detectors},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {664},
	year = {2001},
	note = {<p>cited By 0</p>
},
	pages = {A2661-A2666},
	abstract = {<p>In this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/aSi:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ≈ 2\% and a good sensitivity to the light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035559267\&partnerID=40\&md5=8523351b1b64b21a297934d1549d63ca},
	author = {{\'A}guas, H., Nunes, P., Fortunato, E., Silva, R., Silva, V., Figueiredo, J., Soares, F., Martins, R.}
}
