@article {Ferreira20021644,
	title = {Hot-wire plasma assisted chemical vapor deposition: A deposition technique to obtain silicon thin films},
	journal = {Journal of Applied Physics},
	volume = {91},
	number = {3},
	year = {2002},
	note = {<p>cited By 2</p>
},
	pages = {1644-1649},
	abstract = {<p>We have produced amorphous intrinsic silicon thin films by hot-wire plasma assisted chemical vapor deposition, a process that combines the traditional rf plasma and the recent hot-wire techniques. In this work we have studied the influence of hydrogen gas dilution and rf power on the surface morphology, composition, structure and electro-optical properties of these films. The results show that by using this deposition technique it is possible to obtain at moderate rf power and filament temperature, compact i-type silicon films with ημτ of the order of 10 -5cm 2V -1, without hydrogen dilution. {\textcopyright} 2002 American Institute of Physics.</p>
},
	doi = {10.1063/1.1427133},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036469595\&partnerID=40\&md5=17f7cba0f0472208f334da09ecaa3246},
	author = {Ferreira, I.a , Fortunato, E.a , Martins, R.a , Vilarinho, P.b}
}
