Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
- Citation:
- Fortunato, E., Raniero Siva Gonçalves Pimentel Barquinha Águas Pereira Gonçalves Ferreira Elangovan Martins L. L. A. "Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications." Solar Energy Materials and Solar Cells. 92 (2008): 1605-1610.
Abstract:
Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of∼2.8 × 10-4 ωcm was achieved for a film thickness of 1100nm (sheet resistance ∼2.5ω/□), with a Hall mobility of 18cm2/Vs and a carrier concentration of 1.3 × 1021 cm-3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80% and 90% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed. © 2008 Elsevier B.V. All rights reserved.
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