@article {Fortunato20081605,
	title = {Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications},
	journal = {Solar Energy Materials and Solar Cells},
	volume = {92},
	number = {12},
	year = {2008},
	note = {<p>cited By 105</p>
},
	pages = {1605-1610},
	abstract = {<p>Transparent and highly conducting gallium zinc oxide (GZO) films were successfully deposited by RF sputtering at room temperature. A lowest resistivity of\~{}2.8 {\texttimes} 10-4 ωcm was achieved for a film thickness of 1100nm (sheet resistance \~{}2.5ω/□), with a Hall mobility of 18cm2/Vs and a carrier concentration of 1.3 {\texttimes} 1021 cm-3. The films are polycrystalline with a hexagonal structure having a strong crystallographic c-axis orientation. A linear dependence between the mobility and the crystallite size was obtained. The films are highly transparent (between 80\% and 90\% including the glass substrate) in the visible spectra with a refractive index of about 2, very similar to the value reported for the bulk material. These films were applied to single glass/TCO/pin hydrogenated amorphous silicon solar cells as front layer contact, leading to solar cells with efficiencies of about 9.52\%. With the optimized deposition conditions, GZO films were also deposited on polymer (PEN) substrates and the obtained results are discussed. {\textcopyright} 2008 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.solmat.2008.07.009},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-55349105422\&partnerID=40\&md5=ca3eaba7c227d48034c9f7dc8a353916},
	author = {Fortunato, E., Raniero, L., Siva, L., Gon{\c c}alves, A., Pimentel, A., Barquinha, P., {\'A}guas, H., Pereira, L., Gon{\c c}alves, G., Ferreir}
}
