@article {Martins199747,
	title = {Highly conductive and highly transparent n-type microcrystalline silicon thin films},
	journal = {Thin Solid Films},
	volume = {303},
	number = {1-2},
	year = {1997},
	note = {<p>cited By 28</p>
},
	pages = {47-52},
	abstract = {<p>The aim of this paper is to present data on the dependence of the electro-optical characteristics and structure of n-type microcrystalline silicon films on the r.f. power used during the deposition of films produced by the plasma-enhanced chemical vapour deposition technique. The interest of these films arise from the fact that they combine some electro-optical advantages of amorphous (wide optical gap) and crystalline materials (electronic behaviour), highly interesting in the production of a wide variety of optoelectronic devices such as solar cells and thin film transistors. In this paper, microcrystalline n-type films presenting simultaneously optical gaps of about 2.3 eV, dark conductivity of 6.5 S cm-1 and Hall mobility of about 0.86 cm2 V-1 s-1 will be reported, the highest combined values for n-type microcrystalline silicon films, as far as we know. {\textcopyright} 1997 Elsevier Science S.A.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031189816\&partnerID=40\&md5=f57ae029230f79b04e978092e6fe78c4},
	author = {Martins, R., Ma{\c c}arico, A., Ferreira, I., Nunes, R., Bicho, A., Fortunato, E.}
}
