High quality conductive gallium-doped zinc oxide films deposited at room temperature
- Citation:
- Fortunato, E.a, Assunção Gonçalves Marques Águas Pereira Ferreira Vilarinho Martins V. a A. a. "High quality conductive gallium-doped zinc oxide films deposited at room temperature." Thin Solid Films. 451-452 (2004): 443-447.
Abstract:
Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by rf sputtering at room temperature. The lowest resistivity achieved was 2.6×10-4 Ω cm for a thickness of 1100 nm (sheet resistance ≈1.6 Ω/sq), with a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3. The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2, which is very close to the value reported for bulk material. © 2003 Elsevier B.V. All rights reserved.
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