@article {Fortunato2004443,
	title = {High quality conductive gallium-doped zinc oxide films deposited at room temperature},
	journal = {Thin Solid Films},
	volume = {451-452},
	year = {2004},
	note = {<p>cited By 93</p>
},
	pages = {443-447},
	abstract = {<p>Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by rf sputtering at room temperature. The lowest resistivity achieved was 2.6{\texttimes}10-4 Ω cm for a thickness of 1100 nm (sheet resistance ≈1.6 Ω/sq), with a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3{\texttimes}1021 cm-3. The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90\% and a refractive index of approximately 2, which is very close to the value reported for bulk material. {\textcopyright} 2003 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2003.10.139},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-10444242593\&partnerID=40\&md5=d967d4ba2c56900c473a8466ee8f6c1f},
	author = {Fortunato, E.a , Assun{\c c}{\~a}o, V.a , Gon{\c c}alves, A.a , Marques, A.a , {\'A}guas, H.a , Pereira, L.a , Ferreira, I.a , Vilarinho, P.b , Ma}
}
