High mobility nanocrystalline indium zinc oxide deposited at room temperature
- Citation:
- Fortunato, E., Pimentel Gonçalves Marques Martins A. A. A. "High mobility nanocrystalline indium zinc oxide deposited at room temperature." Materials Research Society Symposium Proceedings. Vol. 811. 2004. 437-442.
Abstract:
In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5×10 -4 Ωcm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.
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