<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E., Pimentel, A., Gonçalves, A., Marques, A., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High mobility nanocrystalline indium zinc oxide deposited at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-12744259363&amp;partnerID=40&amp;md5=3c2364dae2999b48e3f7215954ee0c0c</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">811</style></volume><pages><style face="normal" font="default" size="100%">437-442</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5×10 -4 Ωcm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 2&lt;/p&gt;
</style></notes></record></records></xml>