Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450 °C by spray pyrolysis technique. The Mo doping was varied between 0 and 2.0 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In2O3 with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2 at.%. The film deposited with 0.5 at.% Mo doping shows high mobility of 76.9 cm2V- 1s- 1 , resistivity of 1.8 × 10- 3 Ω-cm and high carrier concentration of 4.6 × 1019 cm- 3 with 81.3% transmittance in the visible range between 500 and 800 nm. Further, the transparency extents well into the near-IR range. © 2008 Elsevier B.V. All rights reserved.
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