@article {Parthiban20083217,
	title = {High-mobility molybdenum doped indium oxide thin films prepared by spray pyrolysis technique},
	journal = {Materials Letters},
	volume = {62},
	number = {17-18},
	year = {2008},
	note = {<p>cited By 13</p>
},
	pages = {3217-3219},
	abstract = {<p>Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450~{\textdegree}C by spray pyrolysis technique. The Mo doping was varied between 0 and 2.0~at.\%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite In2O3 with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2~at.\%. The film deposited with 0.5~at.\% Mo doping shows high mobility of 76.9~cm2V- 1s- 1 , resistivity of 1.8 {\texttimes} 10- 3 Ω-cm and high carrier concentration of 4.6 {\texttimes} 1019~cm- 3 with 81.3\% transmittance in the visible range between 500 and 800~nm. Further, the transparency extents well into the near-IR range. {\textcopyright} 2008 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.matlet.2008.02.022},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049176779\&partnerID=40\&md5=d968125b017a6f26dcc04872a5051f24},
	author = {Parthiban, S.a , Ramamurthi, K.a , Elangovan, E.b , Martins, R.b , Fortunato, E.b , Ganesan, R.c}
}
