High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature
- Citation:
- Fortunato, E., Pimentel Gonçalves Marques Martins A. A. A. "High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature." Thin Solid Films. 502 (2006): 104-107.
Abstract:
In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 × 10 - 4 Ω cm with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices. © 2005 Elsevier B.V. All rights reserved.
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