@article {Fortunato2006104,
	title = {High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature},
	journal = {Thin Solid Films},
	volume = {502},
	number = {1-2},
	year = {2006},
	note = {<p>cited By 47</p>
},
	pages = {104-107},
	abstract = {<p>In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 {\texttimes} 10 - 4 Ω cm with an optical transmittance of 85\%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices. {\textcopyright} 2005 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2005.07.311},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33344468567\&partnerID=40\&md5=8479a6a6eb6a32528f2c3d3d9429840f},
	author = {Fortunato, E., Pimentel, A., Gon{\c c}alves, A., Marques, A., Martins, R.}
}
