@article {Pinto2013729,
	title = {Extended-gate ISFETs based on sputtered amorphous oxides},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {<p>cited By 4</p>
},
	pages = {729-734},
	abstract = {<p>We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, +{\hbox{Ta}}-{2}{\hbox{O}}-{5}{\ hbox{:SiO}}-inf2-inf as the dielectric and +{\hbox{Ta}}-{2}{\hbox{O}}-inf5-inf as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors. {\textcopyright} 2005-2012 IEEE.</p>
},
	doi = {10.1109/JDT.2012.2227298},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883791426\&partnerID=40\&md5=cfc43e3f3d3d58040e9fa29f8360c13a},
	author = {Pinto, J.V.a , Branquinho, R.a , Barquinha, P.a , Alves, E.b , Martins, R.a , Fortunato, E.a}
}
