The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices
- Citation:
- Prabakaran, R.a, Peres Monteiro Fortunato Martins Ferreira M. b T. b. "The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices." Journal of Non-Crystalline Solids. 354 (2008): 2181-2185.
Abstract:
In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18%) and high (80%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around ∼1.8, ∼2.78 and ∼3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS. © 2007 Elsevier B.V. All rights reserved.
Notes:
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