@article {Prabakaran20082181,
	title = {The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices},
	journal = {Journal of Non-Crystalline Solids},
	volume = {354},
	number = {19-25},
	year = {2008},
	note = {<p>cited By 19</p>
},
	pages = {2181-2185},
	abstract = {<p>In the present work we investigate, the role of zinc oxide (ZnO) thin films passivating layer deposited by rf magnetron sputtering at room temperature on low (18\%) and high (80\%) porosity porous silicon (PS). The micro-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of ZnO films coating on PS. A systematic investigation from Raman spectroscopy suggests the formation of a good quality ZnO wurtzite structure on PS. The photoluminescence (PL) measurements on PS and ZnO coated PS shows a red, blue and UV emission bands at around \~{}1.8, \~{}2.78 and \~{}3.2 eV. An enhancement of all PL emission bands have been achieved after ZnO films deposition on high porosity PS. {\textcopyright} 2007 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.jnoncrysol.2007.09.105},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049121315\&partnerID=40\&md5=530f7e0dcc48aea91aefb5175a5db88d},
	author = {Prabakaran, R.a , Peres, M.b , Monteiro, T.b , Fortunato, E.a , Martins, R.a , Ferreira, I.a}
}
