This paper presents a low-offset comparator based on n-type amorphous indium gallium zinc oxide thin-film transistors (TFTs). An a-Si:H TFT model was adapted to fit the electrical characterization data obtained for these devices. The proposed comparator comprises three pre-amplification stages, a positive-feedback analog latch and a fully dynamic digital latch. Simulation results show that the proposed circuit can work at several tens of kHz, with an accuracy of the order of 10 mV, considering a supply voltage of 10 V and a current consumption of 380 μA. Monte-Carlo simulations exhibit a 1-sigma random offset voltage smaller than 10 mV and 40 mV, respectively, with and without using autozeroing techniques. © 2015 IEEE.
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