@conference {Correia2015261,
	title = {Design of a robust general-purpose low-offset comparator based on IGZO thin-film transistors},
	booktitle = {Proceedings - IEEE International Symposium on Circuits and Systems},
	volume = {2015-July},
	year = {2015},
	note = {<p>cited By 1</p>
},
	pages = {261-264},
	abstract = {<p>This paper presents a low-offset comparator based on n-type amorphous indium gallium zinc oxide thin-film transistors (TFTs). An a-Si:H TFT model was adapted to fit the electrical characterization data obtained for these devices. The proposed comparator comprises three pre-amplification stages, a positive-feedback analog latch and a fully dynamic digital latch. Simulation results show that the proposed circuit can work at several tens of kHz, with an accuracy of the order of 10 mV, considering a supply voltage of 10 V and a current consumption of 380 μA. Monte-Carlo simulations exhibit a 1-sigma random offset voltage smaller than 10 mV and 40 mV, respectively, with and without using autozeroing techniques. {\textcopyright} 2015 IEEE.</p>
},
	doi = {10.1109/ISCAS.2015.7168620},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946231727\&partnerID=40\&md5=4908e61a621263db04a683bf967c03d5},
	author = {Correia, A.a b , Martins, R.a , Fortunato, E.a , Barquinha, P.a , Goes, J.b}
}
