@article {Martins19953481,
	title = {Dark current-voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes},
	journal = {Journal of Applied Physics},
	volume = {78},
	number = {5},
	year = {1995},
	note = {<p>cited By 17</p>
},
	pages = {3481-3487},
	abstract = {<p>The aim of this work is to provide the basis for the interpretation, under steady state and in the low-voltage regime of the dark current-density-voltage (J-V) characteristics of transverse asymmetric amorphous silicon (a-Si:H) p-i-n and n-i-p diodes. The transverse asymmetric a-Si:H diodes present ratios between the metal contact and the underneath doped layer areas larger than five, leading to the inclusion, in the diode equation, of a lateral leakage current, responsible for the high saturation current density and the forward shape of the J-V curves recorded. The leakage current depends on the lateral spatial potential developed with which varies following a power-law dependence. The experimental J-V curves in diodes with the doped layer around the metal contact unetched and etched prove the role and origin of this lateral leakage current and, thus, the proposed model. {\textcopyright} 1995 American Institute of Physics.</p>
},
	doi = {10.1063/1.359980},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-36449002034\&partnerID=40\&md5=7aa540c6855c52a6d1abeb05864039eb},
	author = {Martins, R., Fortunato, E.}
}
