@conference {Fortunate2003225,
	title = {Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {763},
	year = {2003},
	note = {<p>cited By 1</p>
},
	pages = {225-230},
	abstract = {<p>Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7{\texttimes}10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3{\texttimes}1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 \%, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0344927758\&partnerID=40\&md5=055b8c8c399cdc3fb026eb8e0d96d4cb},
	author = {Fortunate, E., Assun{\c c}{\~a}o, V., Marques, A., Ferreira, I., {\'A}guas, H., Pereira, L., Martins, R.}
}
