Regina Monteiro

{Aluminophosphate glasses belonging to the Li2O-BaO-Al 2O3- La2O3-P2O 5 system doped with Tb3+ were prepared and investigated. Methods as Induced Coupled Plasma-Mass Spectrometry (ICP-MS), Induced Coupled Plasma-Atomic Emission Spectroscopy (ICP-AES) and X-ray diffraction (XRD) have been used to establish the elemental composition of these vitreous materials. The influence of the Tb3+ ions on the optical properties of the phosphate glasses has been investigated in relation with the structural characteristics of the vitreous matrix. The optical behavior has been studied by ultra-violet-visible (UV-Vis) spectroscopy, revealing electronic transitions specific for terbium ions. Fluorescence spectroscopy measurements have been performed by excitation in the UV and visible domains (377 nm and 488 nm) which resulted in the most significant fluorescence peaks in the Vis domain (540 and 547 nm). Structural information via vibration modes were provided by Fourier Transform Infrared (FTIR) absorption spectra in the 400-4000 cm-1 range. Absorption peaks specific for the vitreous phosphate matrix were put in evidence as P-O-P symmetrical and asymmetrical stretching vibration modes, P-O-P bend, PO2- symmetrical and asymmetrical stretching vibration modes

This paper presents the effect of post-heating temperature and atmosphere on the electrical and optical properties of ZnO:Al thin films prepared by the sol-gel method. The electrical properties of the n-type semiconductor thin films showed that for the final films, the values of carrier concentration ranged between 2.76 and 9.96 × 1019 cm- 3, the Hall mobility values between 7 and 34.1 cm2/V s and the resistivity values between 2.9 × 10- 3 and 5.0 × 10- 2 Ω cm, depending on the processing conditions. For the thin film doped with 2 wt.% Al, preheated at 400 °C and post-heated for 1 h in air at 600 °C, a resistivity of 2.9 × 10- 3 Ω cm has been reached after annealing under a reducing atmosphere of forming gas. The optical transmittance spectra of the only post-heated films and of the post-heated and annealed films showed a good transmittance (75-90%) within the visible wavelength region and some small effects of Al-doping concentration and annealing treatment in forming gas. © 2005 Elsevier B.V. All rights reserved.

Transparent and conductive high preferential c-axis oriented ZnO thin films doped with Al have been prepared by sol-gel method using zinc acetate and aluminium chloride as cations source, 2-methoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip-coating technique at a withdrawal rate of 1.5 cm min-1 on Corning 1737 glass substrate. The effect of dopant concentration, heating treatment and annealing in reducing atmosphere on the microstructure as well as on the electrical and optical properties of the thin films is discussed. The optical transmittance spectra of the films showed a very good transmittance, between 85 and 95%, within the visible wavelength region. The minimum resistivity of 1.3 × 10-3 Ω cm was obtained for the film doped with 2 wt.% Al, preheated at 400 °C and post-heated at 600 °C, after annealing under a reduced atmosphere of forming gas. © 2003 Elsevier B.V. All rights reserved.

This paper presents preliminary results on Al doped ZnO thin films prepared by the solgel method. The thin films were produced by a dip-coater technique on glass substrate, using zinc acetate dihydrate, aluminium chloride hexahydrate, 2-methoxyethanol and monoethanolamine as raw materials. The ZnO thin films were analysed by XRD, Hall effect and SEM measurements. In order to determine the influence of the thermal treatments on the film properties, a set of four different heat treatments (atmosphere and temperature) were studied. All the films are polycrystalline presenting a crystallographic c-axis orientation (002) perpendicular to the substrate. The best results were obtained for films pre-heated at 400°C and post-heated for 1 hour in air at 600°C, after annealing under a reduced atmosphere of forming gas, where a resistivity of 3.9×10-3 Ωcm, a Hall mobility of 34.1 cm2/Vs, a carrier concentration of 4.7×1019 cm-3 and an optical transmittance of 90% were achieved.