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Different glasses based on the ZnO-B2O3-SiO2 system, with a ZnO content ≥ 60 mol% and a fixed SiO2 content (20 mol%), were synthesised using a melt-quenching method. Glass samples with zinc oxide concentrations as high as 65 mol% were prepared successfully without deteriorating the glass-forming ability. The glass samples were submitted to controlled heat-treatments, and the effect of the ZnO/B2O3 molar ratio on the formation of crystalline phases within the glass matrix was investigated by means of differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). DTA results indicated that the glass transition and the onset crystallization temperatures of the studied glasses tended to increase with the increment on the ZnO/B2O3 ratio. XRD data showed that the zinc binary crystalline phases, willemite (Zn2SiO4), a zinc orthosilicate, and zinc borate (Zn3B2O6) could be present in the crystallized glasses, depending on the heat-treatment conditions. The formation of willemite was promoted by an increasing ZnO/B2O3 ratio. Microstructural observations performed by SEM indicated that under controlled experimental parameters (glass composition, heat-treatment temperature and time) the precipitation of nanocrystals within the glass matrix can be achieved, resulting in transparent and translucent willemite glass-ceramics. © 2016 Elsevier B.V. All rights reserved.

High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films. © 2016 Author(s).