The analysis on the technological and organizational change in the European industry, and particularlly the Portuguese one, has been studied at CESO I&D since its foundation on 1988. Few time after that, started a development project that started from a previous research project on the same topics, and supported by JNICT (Ministry of Science). In that projecto we continued to process data that was then not possible to do in the first one. It was then possible to continue a research programme that was urgent and determinant in the field of industrial sociology in Portugal. It focus again on the processes of technological and organizational change in the manufacturing industry.

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A range of CaO-Al2O3-SiO2 glasses have been prepared by fusion of pure starting materials in platinum crucibles. Compositions containing large amounts on network formers, Al2O3 and SiO2, are difficult to crystallize. If the amount of network former is reduced, glasses will self-nucleate and crystallize more readily, but the products of crystallization tend to react with water. This conflict has been partly resolved by adding MgO and ZnO and tailoring compositions so as to produce a phase, variously designated "Q" or "pleochroite", ideally Ca20Al32-2 vMg vSivO68, with v close to 4. Pleochroite crystallizes with a typically fibrous morphology. Preliminary experiments on fragments and melt-cast glass rods indicate that these compositions can be heat treated without deformation to yield highly crystalline, transparent ceramics. © 1989 Chapman and Hall Ltd.

Experimental results on structure defects in microcrystalline (μc) n- and p-doped μc-S1-x:Cx:H films deposited on alkali-free glass substrates by spatial plasma separation1 and obtained by electron paramagnetic resonance (EPR) are presented. The technique used for subtracting the substrate effect on recorded spectra is also discussed as well as its quantification. The microscopic structure of intrinsic defects and impurity states and their role in transport mechanisms are studied and correlated with the composition of their films. These results are also related to transport properties of deposited films in order to observe the role of dopant centres, located at conduction band tails, in controlling the electrical properties. © 1989.

Undoped and doped hydrogenated amorphous silicon semiconductors (a-Si:H) have been produced by a two consecutive decomposition deposition chamber (TCDDC) system assisted by electromagnetic static fields. Through this technique, a spatial separation is achieved between the plasma chemistry and that of the deposition to avoid ion and electron (with high energies) bombardment on the growing surface. Besides this, the use of a static magnetic field perpendicular to the substrate will promote plasma confinement, so avoiding its contamination by residual gases adsorbed on the reactor walls. On the other hand, the use of two grids dc biased in the deposition chamber, will allow control of the main film precursors, responsible for the electro-optical and structural properties of deposited films. In this paper we shall discuss the deposition method used as well as the transport, structural and morphological properties presented by deposited films and its dependence on deposition parameters used. © 1989.

Electrical dark conductivity (σd) and surface composition of undoped and doped a-Si:H thin films have been investigated, using coplanar I−V as a function of temperature and Auger electron spectroscopy (AES). The films were prepared by rf glow discharge deposition on standard soda-lime glass and on alkali-free glass substrates. Comparing these two sets of substrates for undoped films, we find that σd of the films deposited on soda-lime glass substrates at room temperature is higher by more than two orders of magnitude, their activation energy is lower by about a factor of 3, and their photosensitivity (σph/σd) is lower by two orders of magnitude than that of the films deposited on alkali-free glass substrates. We suggest that Na ions, leached from the glass into the a-Si:H overlayer play a significant role in determining the film conductivity by creating electrically active donorlike states. This conclusion is supported by similar measurements on p- and n-type a-Si:H films on the same substrates and by AES results. Films of a-Si:H, grown on thin a-Si:C:H interlayers on soda-lime glass, showed very low Na concentrations and low dark conductivities as found by AES and electrical measurements, respectively. The role of the a-Si:C:H interlayers as diffusion barriers is discussed. © 1989, American Vacuum Society. All rights reserved.

N- and p-type weakly absorbing and highly conductive microcrystalline thin μc-Six:Cy:Oz:H films, have been produced by a TCDDC (Two Consecutive Decomposition and Deposition Chamber) system1. The optoelectronic and structural results show that we are in the presence of a mixed phase of Si microcrystals (c-islands) embedded in a-Six:Cy:Oz:H (a-tissue). Based on that, we propose a model where transport mechanisms are explained by the potential fluctuations related to films heterogeneities. Thus, conduction is due to carriers that by tunneling or percolation "pass" or "go" trough the barriers and/or percolate randomly by the formed channels. © 1989.