This work deals with the study of nanostructured/amorphous silicon solar cell deposited by plasma enhanced chemical vapor deposition at 27.12 MHz by impedance spectroscopy. The solar cell studied present fill factor of 0.67, open circuit voltage of 0.94 V and short-circuit current density of 14.48 mA/cm2, which leads to the efficiency of 9.12%. The impedance spectroscopy analysis was performed under dark and illumination conditions. The data obtained were used to define an electrical equivalent circuit model able to explain the role of the different solar cell components, including the interfaces, on the solar cell performance. © 2006 Elsevier B.V. All rights reserved.

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The purpose of this work is to present in-depth electrical characterization on transparent TFTs, using zinc oxide produced at room temperature as the semiconductor material. Some of the studied aspects were the relation between the output conductance in the post-pinch-off regime and width-to-length ratios, the gate leakage current, the semiconductor/insulator interface traps density and its relation with threshold voltage. The main point of the analysis was focused on channel mobility. Values extracted using different methodologies, like effective, saturation and average mobility, are presented and discussed regarding their significance and validity. The evolution of the different types of mobility with the applied gate voltage was investigated and the obtained results are somehow in disagreement with the typical behavior found on classical silicon based MOSFETs, which is mainly attributed to the completely different structures of the semiconductor materials used in the two situations: while in MOSFETS we have monocrystalline silicon, our transparent TFTs use poly/nanocrystalline zinc oxide with grain sizes of about 10 nm.

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Ab initio and density functional calculations have been performed to study the benzyl azide, 2-, 3- and 4-methyl benzyl azides. Several molecular properties, such as conformational equilibrium, optimal geometry, and vibrational frequencies, have been computed for these molecules. Ionisation energies were also computed.

Ab initio and density functional calculations have been performed to study the benzyl azide, 2-, 3- and 4-methyl benzyl azides. Several molecular properties, such as conformational equilibrium, optimal geometry, and vibrational frequencies, have been computed for these molecules. Ionisation energies were also computed.

The thermoreactivity of a zinc acetate non-alkoxide solution used for the preparation of ZnO-based thin films was investigated in the temperature range 20-600°C by TG-DTA, XRD and SEM data. We found that the formation in air of ZnO crystallites from the sol-gel precursor occurs above 150°C simultaneously with the decomposition of an intermediary compound, most probably carbonate hydroxide (sciante and/or hydrozincite). At 200°C, the crystalline structure is well defined in terms of ZnO hexagonal lattice parameters, although residual organic compounds and water were not yet fully removed and an amorphous phase coexists. A kinetic investigation on the thermal decomposition of sol-gel precursor from DTA data using Kissinger differential equation is also presented. Apparent activation energy values of about. 100 kJ mol-1 corresponding to the non-isothermal decomposition of solid precursors in the temperature range 170-250°C have been found.

Wavelengths and oscillator strengths for all dipole-allowed fine-structure transitions in Zr III have been calculated within the Multi-Configuration Dirac-Fock method with QED corrections. These transitions are included in the spectrum of some chemically peculiar stars, like the B-type star Lupi observed by the Hubble space telescope. The results are compared to existing experimental and semi-empirical data.

Wavelengths and oscillator strengths for all dipole-allowed fine-structure transitions in Zr III have been calculated within the Multi-Configuration Dirac-Fock method with QED corrections. These transitions are included in the spectrum of some chemically peculiar stars, like the B-type star Lupi observed by the Hubble space telescope. The results are compared to existing experimental and semi-empirical data. Corr

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Complex impedance measurements were used to analyze the influence of ultraviolet and ozone gas on the electronic behaviour of ZnO films grown by rf magnetron sputtering. The data show that UV exposure strongly increases the ac conductivity of the film at very low frequencies, and that after ozone exposure it recovers the original value. At high frequencies, however, UV-light exposure it does not change the conductivity but the ozone acts in the sense to decrease it. Two distinct mechanisms, related to two relaxation time distributions are clearly observed: they are superimposed in the virgin sample, but they split forming two semicircles in the z″(f) - z′(f) diagrams when the samples are treated with UV and/or ozone gas. A combination of the bruggeman effective medium approximation (BEMA) with the random free energy barrier model is used to fit the data and to explain the ac conductivity variation phenomena observed. © 2006 Elsevier B.V. All rights reserved.

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In this paper we present results of intrinsic/non doped zinc oxide films deposited at room temperature by rf magnetron sputtering able to be used as a truly semiconductor on electronic devices like ozone gas sensors and ultra-violet detectors. The produced films are polycrystalline with a c-axis preferential orientation parallel to the substrate. The films' resistivity varies from 4.0×10-2 Ωcm to 1.0×10-9 Ωcm, depending on the deposition conditions used (rf power density and oxygen partial pressure), which turns not affecting the optical properties (in average a transmittance of around 85 % and an optical band gap of about 3.44 eV, independent of the deposition conditions used). When exposed to UV light the sensor response based on these films may exceed more than 5 orders of magnitude, recovering to the initial state in the presence of ozone. The sensitivity of the films is improved when the oxygen partial pressure increases and the rf power density used decreases, due to changes on the structural properties of the films. © 2006 Materials Research Society.

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This paper describes the evaluation of different refractory compounds – SiO2, ZrO2 and Y2O3 –as face coats of investment casting shells for c-TiAl. The effect of the different refractories on the metal–mould interaction is studied in different aspects. Experimental results include characterisation of the constituents present at the metal/ mould interface, the segregation profiles of residual elements, namely oxygen, from the interface to the inner part of the samples, the extension and microhardness of the samples external hard case and the samples surface finishing.

In this study, it will be investigated the diffusion of critical elements, namely, carbon (C) and iron (Fe), into a steel substrate (Impax Supreme) during the diamond chemical vapour deposition (CVD) process. The substrate temperature was varied from 700 to 850oC by plasma power manipulations to enable the correlation of substrate temperature with diffusion length and depth of the above mentioned critical elements into steel during film growth conditions. Methane concentration is also a parameter which has been considered during the parametric analysis. The crystalline compounds formed during the diamond growth process are studied using XRD analysis. In addition, SIMS technique is used with depth profiling to monitor the diffusion of elements during the process. The results obtained enabled to improve traditional understanding about the mechanisms relating to diamond deposition on steel substrates using CVD processes.

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