n/a

n/a

This paper presents the performances of an in-line plasma enhanced chemical vapor deposition system constituted by 5 chambers and one external unloaded chamber used in the simultaneous manufacturing of 4 large (30 cm × 40 cm) solar cells deposited on glass substrates. The system is fully automatically controlled by a Programmable Logic Controller using a specific developed software that allows devices mass production without losing the flexibility to perform process innovations according to the industrial requests, i.e. fast and secure changes and optimizations. Overall, the process shift is of about 15 min per each set of 4 solar cells. Without a buffer layer, solar cells with efficiencies of about 9% were produced by the proper tuning of the i-layer production conditions. © 2005 Elsevier B.V. All rights reserved.

n/a

n/a

In this work metal induced crystallization (MIC) using nickel (Ni) was employed to obtain poly-Si by crystallization of amorphous films for application as active layer in TFTs. Ni layers with thicknesses of 0.5 nm, 1 nm and 2 nm were used to crystallize the silicon. The TFTs were produced with a bottom gate configuration using a multi-layer Al2O3/TiO2 insulator produced by atomic layer deposition (ALD) as gate dielectric. The best performances of the TFT produced were obtained when using very thin Ni layers for the crystallization. This is attributed to a lower metal contamination and to the enhancement of grain size, as a result of the lower nucleation density achieved, when using the thinnest Ni layer. Devices that exhibit effective mobility of 45.5 cm2V-1s-1 and an on/off ratio of 5.55×104 were produced using a 0.5 nm Ni layer to crystallize the active channel area.

n/a

n/a

n/a

n/a

n/a

n/a

Energies and transition probabilities of Kβ hypersatellite lines are computed using the Dirac–Fock model for several values of Z throughout the periodic table. The influence of the Breit interaction on the energy shifts from the corresponding diagram lines and on the Kβh1/Kβh3 intensity ratio is evaluated. The widths of the double-K hole levels are calculated for Al and Sc. The results are compared to experiment and to other theoretical calculations.Al_Sc_Mg_Ti

Energies and transition probabilities of Kβ hypersatellite lines are computed using the Dirac–Fock model for several values of Z throughout the periodic table. The influence of the Breit interaction on the energy shifts from the corresponding diagram lines and on the Kβh1/Kβh3 intensity ratio is evaluated. The widths of the double-K hole levels are calculated for Al and Sc. The results are compared to experiment and to other theoretical calculations.

Total electronic correlation corrections to the binding energies of the isoelectronic series of beryllium, neon, magnesium and argon, are calculated in the framework of relativistic multiconfiguration Dirac-Fock method. Convergence of the correlation energies is studied as the active set of orbitals is increased. The Breit interaction is treated fully self-consistently. The final results can be used in the accurately determination of atomic masses from highly charged ions data obtained in Penning-trap experiments.

Total electronic correlation corrections to the binding energies of the isoelectronic series of beryllium, neon, magnesium and argon, are calculated in the framework of relativistic multiconfiguration Dirac-Fock method. Convergence of the correlation energies is studied as the active set of orbitals is increased. The Breit interaction is treated fully self-consistently. The final results can be used in the accurately determination of atomic masses from highly charged ions data obtained in Penning-trap experiments.

n/a

n/a

n/a

n/a

n/a

In this paper we study the electro-optical behaviour and the structure of different TCOs, namely the ZGO, ITO and IZO films before and after being submitted to different hydrogen plasma power densities, for times up to 60 s, aiming their use in a/nc-Si:H solar cells. The results achieved show that ZGO films do not reduce for all plasma conditions used and so, the solar cells produced evidence high current density, about 17% larger that the one recorded in the other TCOs. Besides that, by combining the electrical and optical characteristics of the films through a figure of merit, the data reveal that for the ITO and IZO films even when exposed to very low hydrogen power plasma, the figure of merit is reduced up to 50%. © 2005 Elsevier B.V. All rights reserved.

n/a

In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 seem of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.