This paper presents the results achieved in optimized 1D position sensitive detectors (PSD) using a metal-insulator-semiconductor (MIS) structure and different length to width ratios, in order to determine the optimal geometrical factor for the desired 3D integration. The results show that the optimized MIS PSD produced, exhibited linearity errors as low as 0.8% and sensitivities of 32 mV/cm, for a 5 mW spot beam intensity at a wavelength of 532 nm. The sensors can achieve a longitudinal spatial resolution of 1.25 μm (estimated by modulation transfer function calculation), while the transverse resolution depends on the minimum width used for each sensor. The calculated Jones parameter of the sensors is higher than 1011 J, with a fall-off parameter of 0.012 cm-1, indicating a high signal to noise detection ratio. © 2006 Elsevier B.V. All rights reserved.

The laser scanned photodiode (LSP) presents a new concept of image sensor with application in fields where low cost, large area and design simplicity are of major importance. Over the past few years this type of sensor has been under investigation and development, where several structures have been tested and characterized. In this work we present the physical explanation of device operating principle, with recourse to numerical simulation applied to structures with different compositions of the doped layers. An electrical model for this type of device is presented, enabling a fast evaluation of the device characteristics by means of an electrical simulation program. © 2006 Elsevier B.V. All rights reserved.

This paper is mainly focused on the characterisation of a glass material (GM) obtained from the thermal treatment of a bottom ash (BA) produced at the Municipal Solid Waste (MSW) incineration plant of Valorsul. By melting the BA at 1400°C during 2 hours, and without using any chemical additives, a homogeneous black-coloured glass was obtained. The thermal and mechanical properties of this glass were characterised. The thermal expansion coefficient, measured by dilatometry, was 9-10 × 10-6 per °C and the modulus of rupture, determined by four-point bending test, was 75±6 MPa, which are similar values to those exhibited by commercial soda-lime-silica glasses used in structural applications. The chemical and the ecotoxicological leaching behaviour of the GM were also analysed. The GM was submitted to a leaching procedure composed of 15 sequential extraction cycles. A liquid/solid (L/S) ratio of 2 1/kg was applied in each cycle. The leachates were filtered through a membrane of PTFE (porosity: 0.45 μm). The filtered leachates were characterised for different chemical parameters and for an ecotoxicological indicator (bacterium Vibrio fischeri). The GM was also submitted to a microwave acidic digestion for the assessment of the total metal content. The crude BA was also submitted to the same experimental procedures. The GM showed levels of chemical emission and ecotoxicity for V. fischeri much lower than those determined for the crude BA. Similar characterisation studies will be pursued with the glass-ceramics produced by adequate thermal treatment of the glass, in order to investigate the effect of the crystallization on the final properties.

In this work hafnium oxide (HfO2) was deposited by r.f. magnetron sputtering at room temperature and then annealed at 200 °C in forming gas (N2+H2) and oxygen atmospheres, respectively for 2, 5 and 10 h. After 2 h annealing in forming gas an improvement in the interface properties occurs with the associated flat band voltage changing from -2.23 to -1.28 V. This means a reduction in the oxide charge density from 1.33×1012 to 7.62×1011 cm-2. After 5 h annealing only the dielectric constant improves due to densification of the film. Finally, after 10 h annealing we notice a degradation of the electrical film's properties, with the flat band voltage and fixed charge density being -2.96 V and 1.64×1012 cm-2, respectively. Besides that, the leakage current also increases due to crystallization. On the other hand, by depositing the films at 200 °C or annealing it in an oxidizing atmosphere no improvements are observed when comparing these data to the ones obtained by annealing the films in forming gas. Here the flat band voltage is more negative and the hysteresis on the C-V plot is larger than the one recorded on films annealed in forming gas, meaning a degradation of the interfacial properties. © 2006 Elsevier Ltd. All rights reserved.

Denitrification, or dissimilative nitrate reduction, is an anaerobic process used by some bacteria for energy generation. This process is important in many aspects, but its environmental implications have been given particular relevance. Nitrate accumulation and release of nitrous oxide in the atmosphere due to excess use of fertilizers in agriculture are examples of two environmental problems where denitrification plays a central role. The reduction of nitrate to nitrogen gas is accomplished by four different types of metalloenzymes in four simple steps: nitrate is reduced to nitrite, then to nitric oxide, followed by the reduction to nitrous oxide and by a final reduction to dinitrogen. In this manuscript we present a concise updated review of the bioinorganic aspects of denitrification. (c) 2006 Elsevier Inc. All rights reserved.

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above 106 are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80%, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around 25 cm2/Vs, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering. © 2006 Elsevier B.V. All rights reserved.