A partial plesiosauroid skull from the São Gião Formation (Toarcian, Lower Jurassic) of Alhadas, Portugal is re−evaluated and described as a new taxon, Lusonectes sauvagei gen. et sp. nov. It has a single autapomorphy, a broad triangular parasphenoid cultriform process that is as long as the posterior interpterygoid vacuities, and also a unique character combination, including a jugal that contacts the orbital margin, a distinct parasphenoid–basisphenoid suture exposed between the posterior interpterygoid vacuities, lack of an anterior interpterygoid vacuity, and striations on the ventral surface of
the pterygoids. Phylogenetic analysis of Jurassic plesiosauroids places Lusonectes as outgroup to “microcleidid elasmosaurs”, equivalent to the clade Plesiosauridae. Lusonectes sauvagei is the only diagnostic plesiosaur from Portugal, and the westernmost occurrence of any plesiosaurian in Europe.

n/a

n/a

This Chapter presents the optimal design of radio-frequency integrated spiral inductors. The basic idea is to generate an analytical model to characterize integrated inductors based on the double {\ensuremathπ}-model, and offer to the designer an approach to determine the inductor layout parameters. Particle Swarm Optimization technique is used to generate optimal values of parameters of the developed models. Viability of the proposed models is highlighted via comparison with ASITIC simulation results.

Superoxide reductases are involved in relevant biological electron transfer reactions related to protection against oxidative stress caused by reactive oxygen species. The electrochemical features of metalloproteins belonging to the three different classes of enzymes were studied by potentio-dynamic techniques (cyclic and square wave voltammetry): desulfoferrodoxin from Desulfovibrio vulgaris Hildenborough, class I superoxide reductases and neelaredoxin from Desulfovibrio gigas and Treponema pallidum, namely class II and III superoxide reductases, respectively. In addition, a small protein, designated desulforedoxin from D. gigas, which has high homology with the N-terminal domain of class I superoxide reductases, was also investigated. A comparison of the redox potentials and redox behavior of all the proteins is presented, and the results show that SOR center II is thermodynamically more stable than similar centers in different proteins, which may be related to an intramolecular electron transfer function.

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm(2) and 58.6 mW/cm(2) as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 x 10(-4) Omega.cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm(2) from a 5% Sn alloy or at 19.5 mW/cm(2) from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. (C) 2012 Elsevier B. V. All rights reserved.

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm(2) and 58.6 mW/cm(2) as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 x 10(-4) Omega.cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm(2) from a 5% Sn alloy or at 19.5 mW/cm(2) from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. (C) 2012 Elsevier B. V. All rights reserved.

We study the most important processes for the creation of excited states in He-like through C- like praseodymium ions from the ions ground configurations, leading to the emission of K X-ray lines. Theoretical values for inner-shell excitation and ionization cross sections, transition probabilities and energies for the deexcitation processes, are calculated in the framework of the multi-configuration Dirac- Fock method, including QED corrections. Using these calculated values, a theoretical Kα X-ray spectrum is obtained, which is compared to recent experimental data obtained in the Livermore Super-EBIT electron beam ion trap facility.

We study the most important processes for the creation of excited states in He-like through C- like praseodymium ions from the ions ground configurations, leading to the emission of K X-ray lines. Theoretical values for inner-shell excitation and ionization cross sections, transition probabilities and energies for the deexcitation processes, are calculated in the framework of the multi-configuration Dirac- Fock method, including QED corrections. Using these calculated values, a theoretical Kα X-ray spectrum is obtained, which is compared to recent experimental data obtained in the Livermore Super-EBIT electron beam ion trap facility.

A gene encoding Bfr (bacterioferritin) was identified and isolated from the genome of Desulfovibrio vulgaris cells, and overexpressed in Escherichia coli. In vitro, H(2)O(2) oxidizes Fe(2+) ions at much higher reaction rates than O(2). The H(2)O(2) oxidation of two Fe(2+) ions was proven by Mossbauer spectroscopy of rapid freeze-quenched samples. On the basis of the Mossbauer parameters of the intermediate species we propose that D. vulgaris Bfr follows a mineralization mechanism similar to the one reported for vertebrate H-type ferritins subunits, in which a diferrous centre at the ferroxidase site is oxidized to diferric intermediate species, that are subsequently translocated into the inner nanocavity. D. vulgaris recombinant Bfr oxidizes and stores up to 600 iron atoms per protein. This Bfr is able to bind DNA and protect it against hydroxyl radical and DNase deleterious effects. The use of H(2)O(2) as an oxidant, combined with the DNA binding and protection activities, seems to indicate a DPS (DNA-binding protein from starved cells)-like role for D. vulgaris Bfr.

Copper oxide is a well known p-type semiconductor material, usually obtained by thermal oxidation of copper thin-films within few minutes, at atmospheric pressure. In this paper, thin films of copper oxide that were deposited by radio-frequency plasma enhanced reactive thermal evaporation of copper at room temperature, without any post-deposition annealing treatment, are studied. The deposition of good quality p-type semiconductor oxide to be used in the fabrication of p-TFTs is the purpose of this work. The thickness of the films varies from 97 up to 160 nm. The influence of rf power density on chemical, electrical and optical properties of the films was studied. Samples present conductivity within the range of 6 x 10(-5) to 4 x 10(2) Omega(-1) cm(-1) (thermal activation energy in the interval 0.46 to 0.01 eV). The p-type conductivity of the films was confirmed by Seebeck effect in the more conductive samples. Surface composition obtained by XPS analysis was correlated with optical and electrical properties, showing that rf-power plays a main role in changes of material characteristics.

Copper oxide is a well known p-type semiconductor material, usually obtained by thermal oxidation of copper thin-films within few minutes, at atmospheric pressure. In this paper, thin films of copper oxide that were deposited by radio-frequency plasma enhanced reactive thermal evaporation of copper at room temperature, without any post-deposition annealing treatment, are studied. The deposition of good quality p-type semiconductor oxide to be used in the fabrication of p-TFTs is the purpose of this work. The thickness of the films varies from 97 up to 160 nm. The influence of rf power density on chemical, electrical and optical properties of the films was studied. Samples present conductivity within the range of 6 x 10(-5) to 4 x 10(2) Omega(-1) cm(-1) (thermal activation energy in the interval 0.46 to 0.01 eV). The p-type conductivity of the films was confirmed by Seebeck effect in the more conductive samples. Surface composition obtained by XPS analysis was correlated with optical and electrical properties, showing that rf-power plays a main role in changes of material characteristics.

Theoretical expressions for ionization cross sections by electron impact based on the binary encounter Bethe (BEB) model, valid from ionization threshold up to relativistic energies, are proposed.
The new modified BEB (MBEB) and its relativistic counterpart (MRBEB) expressions are simpler than the BEB (nonrelativistic and relativistic) expressions because they require only one atomic parameter, namely the binding energy of the electrons to be ionized, and use only one scaling term for the ionization of all sub-shells.
The new models are used to calculate the K-, L- and M-shell ionization cross sections by electron impact for several atoms with Z from 6 to 83. Comparisons with all, to the best of our knowledge, available experimental data show that this model is as good or better than other models, with less complexity.

Technology Assessment (TA) considers the knowledge on (possible ou probable) technological effects in the processes of decision making and exploring potencial technological risks with secondary effects. Besides that, it is a scientific process with the aim of contributing the public and political opinion formation relative to social aspects of science and technology. That formation is done in an interactive and communicational mode. It overtakes the legitimacy and technology conflicts problems. TA is dealing with a political process either it is related with a parliamentary level decision on the introduction or limitation of new technologies, or at the level of participative processes of entities interested in the labour sphere. In this study, it is concluded that the TA processes at the level of organization of work can aim to fulfill higher levels of productivity and performance of installed equipment, or even to increase the quality of the product or the production process. That does not mean necessarily increases in income of workers and employees. That is why the participation of these actors is also so fundamental to this process.