Electrospun fibers of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] (F8T2) with exceptional electro-optical performance are obtained. The I/T characteristics measured in fibers with 7-15 μm diameter and 1 mm length show a semiconductor behavior; their thermal activation energy is 0.5 eV and the dark conductivity at RT is 5 × 10-9 (Ω cm)-1. Besides exhibiting a photosensitivity of about 60 under white light illumination with a light power intensity of 25 mW · cm-2, the fibers also attain RT photoluminescence in the cyan, yellow, and red wavelength range under ultraviolet, blue, and green light excitation, respectively. Optical microscope images of F8T2 reveal homogeneous electrospun fibers, which are in good agreement with the uniformly radial fluorescence observed. The production of electrospun fibers from poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] (F8T2) obtained without a carrier polymer is reported. The obtained fibers are shown to have properties suitable for organic fiber photovoltaic and sensors applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In the present work one host natural matrix - agar - has been doped with magnesium triflate (Mg(CF3SO3)2) with the goal of developing electrolytes for the fabrication of solid-state devices. The resulting samples have been represented by the notation Agar nMg(CF3SO3)2, where n represents the percentage of the magnesium triflate salt proportion in the electrolyte samples. The samples investigated, with n between 0.00% and 37.56%, have been obtained as transparent and thin films. The samples have been characterized by conductivity measurements, thermal analysis, cyclic voltammetry, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The agar-based electrolytes were also tested as ionic conductor in an electrochromic device with the following configuration: glass/indium tin oxide (ITO)/WO 3/agar-based electrolyte/CeO2-TiO2/ITO/glass. © 2013 Copyright Taylor and Francis Group, LLC.

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m) -1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV. © 2013 Elsevier B.V. All rights reserved.

This paper characterizes transparent current mirrors with n-type amorphous gallium-indium-zinc-oxide (a-GIZO) thin-film transistors (TFTs). Two-TFT current mirrors with different mirroring ratios and a cascode topology are considered. A neural model is developed based on the measured data of the TFTs and is implemented in Verilog-A; then it is used to simulate the circuits with Cadence Virtuoso Spectre simulator. The simulation outcomes are validated with the fabricated circuit response. These results show that the neural network can model TFT accurately, as well as the current mirroring ability of the TFTs. © 2005-2012 IEEE.