Thin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0% in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0%. The transmittance spectra were found to be in the range of 77 to 89%. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26×10 -3 to 4.08×-1 Ωcm for the increase in OVP from 1.4 to 4.1%, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm. © 2006 Materials Research Society.

Cross-linked polyethylene (XLPE) peelings from aged power cables from three different sources were studied using a combined procedure of isothermal and thermo-stimulated current measurements. Different parameters, such as electric field, temperature, charging/discharging times, can be selected in order to make an analysis of the space charge characteristics (such as, relaxation times and activation energies). Three different cables peelings were analyzed: A - electrically aged in the laboratory at high temperature, B - service aged for 18 years and C - thermally aged in the laboratory at high temperature. The results were compared for the different types of samples and also with previous results on laboratory aged and produced films of low-density polyethylene (LDPE) and XLPE.

The aim of this work is to present a spectroscopic ellipsometry study focused on the annealing time effect on nickel metal induced crystallization of amorphous silicon thin films. For this purpose silicon layers with 80 and 125 nm were used on the top of which a 0.5 nm Ni thick layer was deposited. The ellipsometry simulation using a Bruggemann Effective Medium Approximation shows that films with 80 nm reach a crystalline fraction of 72% after 1 h annealing, appearing to be full crystallized after 2 h. No significant structural improvement is detected for longer annealing times. On the 125 nm samples the crystalline volume fraction after 1 h is only around 7%, requiring 5 h to get a similar crystalline fraction than the one achieved with the thinner film. This means that the time required for full crystallization will be strongly determined by the Si layer thickness. Using a new fitting approach the Ni content within the films was also determined by SE and related to the silicon film thickness. © 2006 Elsevier B.V. All rights reserved.

Electrical properties of natural cork, commercial cork agglomerates (for floor and wall coverings) and a recently developed composite of cork/TetraPak (R) were studied. Measurements of isothermal charge and discharge currents were made for natural cork samples in different directions (axial, radial and tangential cuts). The isothermal current characteristics and the samples conductivity were investigated under different conditions (electric field, temperature and environmental conditions: in air at ambient relative humidity (RH), dry air and vacuum), also the samples could be or not conditioned (dried in vacuum or in a P2O5 atmosphere at room temperature). From these results the influence of water on the electrical properties of natural cork could be seen. In order to compare the three different cork materials a preliminary study was made. Isothermal charge and discharge currents and conductivity after 1h charging were measured and compared for different electric fields and temperature in air at ambient RH.

Electrochromic materials have attracted considerable attention during the last two decades as a consequence of their potential application in several different types of optical devices. Examples of these devices include intelligent windows and time labels. In this paper the authors describe results obtained with thin tungsten oxide films produced at room temperature by rf magnetron sputtering under an argon and oxygen atmosphere on transparent conductive oxide coated glass substrates. To protect the surface of the electrochromic film, prevent water absorption and obtain a good memory effect under open circuit voltages, a layer of Ta2O5 was deposited over the WO3 films. In this study, the effect of different electrolyte compositions on the open circuit memory of optical devices has been characterized. The best results were obtained for electrochromic devices with polymer gel p(TMC)3LiC1O4 and p(TMC)8LiClO 4 electrolytes. These prototype devices present an overall transmittance of ∼75% in their bleached state and after coloration 40.5 and 52.5% respectively. These devices also show memory effect and an optical density considered satisfactory for some electrochromic applications.

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a-SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100°C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Nanostructured silicon films were deposited on the amorphous to microcrystalline transition region by plasma enhanced chemical vapor deposition, using an rf frequency of 27.12 MHz. Micro-Raman spectroscopy data show that in the transition region the peaks typically associated with amorphous silicon are slightly shifted towards higher wavenumber and become narrow, which could be explained by the short range order improvement or by the incorporation of very small Si nanocrystallites. The hydrogen evolution spectra from samples deposited in this region show two peaks, one at low temperature (LT) and the other at high temperature (HT), around 698 K and 840 K, respectively. These peaks represent activation energies of 87 (LT) and 135 (HT) kJ/mol, respectively, as deduced from the so-called Kissinger's method. The solar cells fabricated using i-layers produced in this transition region show good performances, with current density = 14.96 mA/cm2, short circuit voltage = 0.95 V, and fill factor = 0.67, which leads to efficiencies of 9.52%. © 2006 Elsevier B.V. All rights reserved.

This work deals with the study of nanostructured/amorphous silicon solar cell deposited by plasma enhanced chemical vapor deposition at 27.12 MHz by impedance spectroscopy. The solar cell studied present fill factor of 0.67, open circuit voltage of 0.94 V and short-circuit current density of 14.48 mA/cm2, which leads to the efficiency of 9.12%. The impedance spectroscopy analysis was performed under dark and illumination conditions. The data obtained were used to define an electrical equivalent circuit model able to explain the role of the different solar cell components, including the interfaces, on the solar cell performance. © 2006 Elsevier B.V. All rights reserved.

The purpose of this work is to present in-depth electrical characterization on transparent TFTs, using zinc oxide produced at room temperature as the semiconductor material. Some of the studied aspects were the relation between the output conductance in the post-pinch-off regime and width-to-length ratios, the gate leakage current, the semiconductor/insulator interface traps density and its relation with threshold voltage. The main point of the analysis was focused on channel mobility. Values extracted using different methodologies, like effective, saturation and average mobility, are presented and discussed regarding their significance and validity. The evolution of the different types of mobility with the applied gate voltage was investigated and the obtained results are somehow in disagreement with the typical behavior found on classical silicon based MOSFETs, which is mainly attributed to the completely different structures of the semiconductor materials used in the two situations: while in MOSFETS we have monocrystalline silicon, our transparent TFTs use poly/nanocrystalline zinc oxide with grain sizes of about 10 nm.