The periplasmic hydrogenase of Desulfovibrio vulgaris (Hildenbourough) is an all Fe-containing hydrogenase. It contains two ferredoxin type [4Fe-4S] clusters, termed the F clusters, and a catalytic H cluster. Recent X-ray crystallographic studies on two Fe hydrogenases revealed that the H cluster is composed of two sub-clusters, a [4Fe-4S] cluster ([4Fe-4S]H) and-a binuclear Fe cluster ([2Fe]H), bridged by a cysteine sulfur. The aerobically purified D. vulgaris hydrogenase is stable in air. It is inactive and requires reductive activation. Upon reduction, the enzyme becomes sensitive to O(2) indicating that the reductive activation process is irreversible. Previous EPR investigations showed that upon reoxidation (under argon) the H cluster exhibits a rhombic EPR signal that is not seen in the as-purified enzyme, suggesting a conformational change in association with the reductive activation. For the purpose of gaining more information on the electronic properties of this unique H cluster and to understand further the reductive activation process, variable-temperature and variable-field Mossbauer spectroscopy has been used to characterize the Fe-S clusters in D. vulgaris hydrogenase poised at different redox states generated during a reductive titration, and in the GO-reacted enzyme. The data were successfully decomposed into spectral components corresponding to the F and H clusters,and characteristic parameters describing the electronic and magnetic properties of the F and H clusters were obtained. Consistent with the X-ray crystallographic results, the spectra of the H cluster can be understood as originating from an exchange coupled [4Fe-4S] - [2Fe] system. In particular, detailed analysis of the data reveals that the reductive activation begins with reduction of the [4Fe-4S]H cluster from the 2+ to the If state, followed by transfer of the reducing equivalent from the [4Fe-4S]H subcluster to the binuclear [2Fe]H subcluster. The results also reveal that binding of exogenous CO to the H cluster affects significantly the exchange coupling between the [4Fe-4S]H and the [2Fe]H subclusters. Implication of such a CO binding effect is discussed.

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A nonlinear DC servomotor model with friction, saturation, backlash and motor starting voltage is presented in this paper. Traditionally the position of a servo is controlled with a PD-controller. In the presence of disturbance, PID control results with overshoot and long recovery time. In simulations, the integral time of the controller is modified to fasten the recovery time. To control the position of the servomotor is proposed a Hybrid Control Architecture using a nonlinear PID controller and a Fuzzy PID controller. Simulation results with the Hybrid Controller are presented.

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Results are presented concerning the morphological and structural characteristics exhibited by the Cu-Sn-Cu system to be used in electronic lead-free soldering processes, under different process temperatures and pressures. The results show that the Cu3Sn or Cu6Sn5 phases needed to supply the thermal, mechanical and electrical stability to the joints formed require Sn layers (either electrodeposited or by using preforms) whose thickness depends on the process temperature used. For process temperatures of 533 K the thickness of the Sn layer should be above 20 μm, while for process temperatures of 573 K, the Sn thickness required is reduced to 10 μm. The joints formed support shear stresses above 12 MPa, as required by electronic standards. Apart from that, microcracks start appearing if an excess of Sn is used during the soldering operation. The set of tests performed indicates that this new joint is quite promising to substitute the conventional solder process applied to power diodes.

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In this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5 V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e- RMS.); 2. Fast-response surface-barrier FTO/n–n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the `critical fluence' value (3×1014 cm-2) for neutron irradiation.

We report the properties and optoelectronic applications of transparent and conductive indium and tin oxide films prepared by the spray pyrolysis method and doped with Sn or F, respectively. The film properties have been measured using X-ray diffraction, optical and electrical absorption. As examples of applications we produced a set of selective optical detectors for different spectral regions, covering the wavelength range from 0.25 to 1.1 μm, based on metal oxide-semiconductor heterostructures and using different substrates such as: GaP, GaSe, AlxGa1-xAs, GaAs and Si. The fabricated devices exhibit several features such as: production simplicity, high quantum efficiency, uniform sensitivity over the entire active area and a high response speed. Finally, we present a high quantum efficiency and solar blind monocrystalline zinc sulphide optical sensor fabricated by spray deposition as an alternative to the ultraviolet-enhanced SiC and GaN photodetectors and the performances of a solar cell. © 1998 Elsevier Science B.V. All rights reserved.

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Structure and QED effects for 2s1/2 and 2p3/2 levels are calculated for lithiumlike U89+ trough neonlike U82+, lithiumlike Th87+ trough neonlike Th80+ and lithiumlike Bi80+ trough neonlike Bi73+. The results of the first two sets are compared with recent measurements of the 2s1/2-2p3/2 transition energy in 3 to 10-electron ions. Good agreement with experiment is found for most of the observed lines. Forty-one possible transitions are calculated for each ion in the eight ionization states, in the experimental energy range. Twenty-eight of these transitions have not been observed, nor calculated previously. We also calculate transition rates, branching ratios, excitation and ionization cross sections and confirm that the thirteen experimental observed transitions correspond to the ones with highest relative intensities. However, we find nineteen more transitions that could be measured in a more sensitive experiment.X

Series connection of power devices has evolved into a mature technique and is widely applied in HV dc systems. Static and dynamic voltage balance is ensured by shunting individual devices with dissipative snubbers. The snubber losses become pronounced for increased operating frequencies and adversely affect power density. Capacitive snubbers do not exhibit these disadvantages, but they require a zero-voltage switching mode. Super-resonant power converters facilitate the principle of zero-voltage switching. A high-voltage dc-dc power converter with multiple series-connected devices is proposed. It allows the application of nondissipating snubbers to assist the voltage sharing between the multiple series-connected devices and lowers turn-off losses. Simulation results obtained with a circuit simulator are validated in an experimental converter operating with two series-connected devices. The behavior of the series connection is examined for MOSFET's and insulated gate bipolar transistors (IGBT's) by both experimental work with a 2-kW prototype and computer simulation. Applications can be found in traction and heavy industry, where the soft-switching converter is directly powered from a high-voltage source.