The aim of this work is to provide the basis for the interpretation, under steady state conditions, of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSD) and the determination of its linear spatial detection limits, function of the device, and light spot source characteristics. This leads to the development of a model, based on the application of the Poisson, continuity, and current density equations in the p-i-n junction, where two thin resistive layers, as equipotentials, are considered on both sides of the doped layers. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlations discussed. © 1995 American Institute of Physics.

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time. Taking advantage of the optical properties presented by a-Si:H devices, we have developed a LTFPSD with 128 integrated elements able to be used in 3D inspections/measurements. Each element consists of a one-dimensional LTFPSD, based on a p-i-n diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it will be possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analog detection). © 1995 American Institute of Physics.

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).

We report experimental data on light soaking of a-Si: H solar cells as well as the role played by the temperature on the metastable light-induced defect growth. We studied the temperature and intensity dependence on the photoconductivity, μτ product and density of states at the Fermi level (g(Ef)) and we found that the rate of defect growth on the i-layer depends on the quality of the material and on the annealing temperature, resulting from an equilibrium between light-induced and light-annealed defects. The photoresponse of the devices is mainly ruled by its microstructure, and depends on the fraction of hydrogen bounded on internal surfaces. Results suggest a correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces, suggesting structural changes during the degradation process. Data show, also, that the thermal annealing effect is worthless up to 70°C because of light-induced defect-generation being the dominant process in recombination mechanisms. © 1994.

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD), with 5 cm×5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si:H) technology, produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). The metal contacts are located in the four edges of the detected area, two of them located on the back side of the ITO/PIN/Al structure and the others two located in the front side. The key factors of the detectors resolution and linearity are the thickness uniformity of the different layers, the geometry and the contacts location. Besides that, edge effects on the sensor's corner disturb the linearity of the detector. In this paper we present results concerning the linearity of the detector as well as its optoelectronic characteristics and the role of the i-layer thickness on the final sensor performances.