The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-TiSMA magnetron sputtered thin films

Citation:
Martins, R. M. S., FMB Fernandes, R. J. C. Silva, L. Pereira, P. R. Gordo, M. J. P. Maneira, M. Beckers, A. Mucklich, and N. Schell. "The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-TiSMA magnetron sputtered thin films." Applied Physics a-Materials Science & Processing. 83.1 (2006): 139-145.

Abstract:

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