Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. The key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive component but also as active component, similar to what we observe in conventional semiconductors like silicon. In this paper we present the recent progress in n- and p-type oxide based thin film transistors (TFT) produced by rf magnetron sputtering and we will summarize the major milestones already achieved with this emerging and very promising technology. © 2015 IEEE.

Abstract Probabilistic fatigue models are required to account conveniently for several sources of uncertainty arising in the prediction procedures for structural details, such as the scatter in material behaviour. In this paper, a procedure to derive probabilistic S-N fields for structural details [1] is applied to a notched geometry with elliptic central hole made of puddle iron from the Eiffel bridge, based on the local approaches supported by the probabilistic ɛa–N or Smith–Watson–Topper (SWT)–N fields [1,2]. This procedure suggests an extension of the fatigue crack propagation model proposed by Noroozi et al. [3,4] to structural details, in order to cover both the fatigue crack initiation and fatigue crack propagation, based on local strain approaches to fatigue. Both fatigue crack initiation and fatigue crack propagation mechanisms are accounted for in the proposed approach. The numerical results are compared with available experimental S-N fatigue data for the notched plate under consideration.

The combination of high transparency and good thermoelectric properties of SnO2 can open new field of applications for the thin film thermoelectric materials. Here we report on SnO2 thin films with transmittance above 90%, resistivity bellow 10-3Ωm and a Power Factor around 10-4 W/m.K2, for a Seebeck of -255μV/K, at room temperature. The effect of film thickness and post-deposition annealing on the thermoelectric properties were analysed. The performances of a single layer thermoelectric device are also presented. © 2015 .