Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence X-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ∼88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/Vċ s with an I ON/IOFF ratio of 2 × 103 and a threshold voltage of-1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer. © 2011 IEEE.

During electric polarization charge is injected into the material. The structure is decorated with space charge and during the subsequent heating an apparent peak and the genuine peaks that are related to dipole randomization and charge detrapping are observed. The method is used here to analyze the molecular movements in polyimide in the temperature range from 293 to 623K. Two weak relaxations have been observed around 337K and around 402K. The electrical conductivity changes with temperature in agreement with the Arrhenius law only below (W=(0.84±0.03) eV ) and above ( W=(0.82±0.03) eV) the temperature range where the β relaxation is observed. The variation of the electrical conductivity with temperature, in the range of the β relaxation, is controlled by the variation of the charge currier mobility with temperature and it shows a non-Arrhenius behavior. We suggest that the β1 sub-glass relaxation is related to the rotation or oscillation of phenyl groups and the β2 sub-glass relaxation is related to the rotation or oscillation of the imidic ring. At higher temperatures an apparent peak was observed. The relaxation time of the trapped charge, at 573K, is high than 8895s.

Many errors in spreadsheet formulas can be avoided if spreadsheets are built automatically from higher-level models that can encode and enforce consistency constraints. However, designing such models is time consuming and requires expertise beyond the knowledge to work with spreadsheets. Legacy spreadsheets pose a particular challenge to the approach of controlling spreadsheet evolution through higher-level models, because the need for a model might be overshadowed by two problems: (A) The benefit of creating a spreadsheet is lacking since the legacy spreadsheet already exists, and (B) existing data must be transferred into the new model-generated spreadsheet. To address these problems and to support the model-driven spreadsheet engineering approach, we have developed a tool that can automatically infer ClassSheet models from spreadsheets. To this end, we have adapted a method to infer entity/relationship models from relational database to the spreadsheets/ClassSheets realm. We have implemented our techniques in the HAEXCEL framework and integrated it with the ViTSL/Gencel spreadsheet generator, which allows the automatic generation of refactored spreadsheets from the inferred ClassSheet model. The resulting spreadsheet guides further changes and provably safeguards the spreadsheet against a large class of formula errors. The developed tool is a significant contribution to spreadsheet (reverse) engineering, because it fills an important gap and allows a promising design method (ClassSheets) to be applied to a huge collection of legacy spreadsheets with minimal effort.

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This study deals with SiO2-P2O5 powders obtained by sol-gel process, starting from tetraethoxysilane (TEOS) as precursor for SiO2 and either triethylphosphate (TEP) or phosphoric acid (H3PO4) as precursors for P2O5. In the case of samples prepared with H3PO4, TG-DTA data showed an accentuated weight loss associated to an endothermic effect up to about 140 °C, specific for the evaporation of water and ethylic alcohol from structural pores, and also due to alkyl-amines evaporation. Sol-gel samples prepared with TEP exhibited different thermal effects, depending on the type of atmosphere used in the experiments, i.e. argon or air. XRD analysis revealed that annealed sol-gel samples prepared with H3PO4 showed specific peaks for silicophosphate compounds such as Si3(PO4)4, Si2P2O9, and SiP2O7. XRD results for annealed sol-gel samples prepared with TEP indicated mainly the presence of a vitreous (amorphous) phase, which could be correlated with SEM images. The presence of SiO2 in the sample might be expected. Thus, we have searched for any SiO2 polymorph possible to crystallize. Only potential peaks of cristobalite were identified but some of them are overlapping with peaks of other crystalline phosphates. SEM analysis indicated a decrease of the amount of crystalline phases with the increase in the annealing temperature. © 2009 Elsevier B.V. All rights reserved.

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