The purpose of this work is to present in-depth electrical characterization on transparent TFTs, using zinc oxide produced at room temperature as the semiconductor material. Some of the studied aspects were the relation between the output conductance in the post-pinch-off regime and width-to-length ratios, the gate leakage current, the semiconductor/insulator interface traps density and its relation with threshold voltage. The main point of the analysis was focused on channel mobility. Values extracted using different methodologies, like effective, saturation and average mobility, are presented and discussed regarding their significance and validity. The evolution of the different types of mobility with the applied gate voltage was investigated and the obtained results are somehow in disagreement with the typical behavior found on classical silicon based MOSFETs, which is mainly attributed to the completely different structures of the semiconductor materials used in the two situations: while in MOSFETS we have monocrystalline silicon, our transparent TFTs use poly/nanocrystalline zinc oxide with grain sizes of about 10 nm.

This paper describes the evaluation of different refractory compounds – SiO2, ZrO2 and Y2O3 –as face coats of investment casting shells for c-TiAl. The effect of the different refractories on the metal–mould interaction is studied in different aspects. Experimental results include characterisation of the constituents present at the metal/ mould interface, the segregation profiles of residual elements, namely oxygen, from the interface to the inner part of the samples, the extension and microhardness of the samples external hard case and the samples surface finishing.

Induced defects in silver polycrystalline samples irradiated with 4 keV Ar+ were characterised with slow positron implantation spectroscopy. The implanted gas was found to interact with ion irradiation defects. The evolution of the defects and gas-defect interactions were followed through a multi-step isochronal annealing treatment. Two different defected regions were detected. A region near to the surface, due to a distribution of vacancy-like defects produced by irradiation, and a deeper one due to coalescence of Ar. The deeper defects evolve with thermal treatments and probably produce cavities which are not easily recovered.