This paper is mainly focused on the characterisation of a glass material (GM) obtained from the thermal treatment of a bottom ash (BA) produced at the Municipal Solid Waste (MSW) incineration plant of Valorsul. By melting the BA at 1400ºC during 2 hours, and without using any chemical additives, a homogeneous black-coloured glass was obtained. The thermal and mechanical properties of this glass were characterised. The thermal expansion coefficient, measured by dilatometry, was 9-10 x 10-6 per ºC and the modulus of rupture, determined by four-point bending test, was 75±6 MPa, which are similar values to those exhibited by commercial soda-lime-silica glasses used in structural applications. The chemical and the ecotoxicological leaching behaviour of the GM were also analysed. The GM was submitted to a leaching procedure composed of 15 sequential extraction cycles. A liquid/solid (L/S) ratio of 2 l/kg was applied in each cycle. The leachates were filtered through a membrane of PTFE (porosity: 0.45 8m). The filtered leachates were characterised for different chemical parameters and for an ecotoxicological indicator (bacterium Vibrio fischeri). The GM was also submitted to a microwave acidic digestion for the assessment of the total metal content. The crude BA was also submitted to the same experimental procedures. The GM showed levels of chemical emission and ecotoxicity for V. fischeri much lower than those determined for the crude BA. Similar characterisation studies will be pursued with the glass-ceramics produced by adequate thermal treatment of the glass, in order to investigate the effect of the crystallization on the final properties.

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This paper addresses the design and planning of supply chains with product return. A graph approach is used as the modelling methodology. Commonly, the application of graph approaches to the design of supply chains, considers nodes as chain entities and arcs as connections between them. These assumptions are extended in the present work where products may also be associated with both nodes and arcs. A multi-product network formulation is obtained which is further generalised to consider the modelling of time, resulting in a dynamic multi-product network model with product return. This generalisation assumes that any node is a transformation point which allows inbound and outbound products to differ. Considering four different kinds of entities (factories, warehouses, sorting centres and customers), proper functions are defined for each one: production, postponement, usage and selection. An example, base on a Portuguese industry case, is applied in order to corroborate the model applicability and adequacy to real world problems.

Insensitivity to light irradiation is desirable for conventional applications of thin-film transistors, i.e., the active matrices of displays. However, if one produces a device presenting controlled sensitivity to light, many other applications can benefit or can even be created. In this work it is shown the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide. In the dark, the devices present very good electrical properties, working in the enhancement mode, exhibiting on-off ratios higher than 107 and channel mobility above 30 cm2/V s. Remarkable results were achieved when the devices were exposed to light radiation, the most striking one is the possibility to switch between enhancement (in the dark) and depletion (illuminated) modes, with different threshold voltages and on/off ratios, function of the light power density and wavelength used. This type of behavior permits to design circuits where one can have the same transistor working either in the enhancement or depletion modes, function of the light beam and intensity impinging on it, highly important for short wavelength detector applications. © 2006 Elsevier B.V. All rights reserved.

Multicomponent amorphous oxides are starting to emerge as a class of appealing semiconductor materials for application in transparent electronics. In this work, a high performance bottom-gate n-type transparent thin-film transistors are reported, being the discussion primarily focused on the influence of the indium zinc oxide active layer thickness on the properties of the devices. For this purpose, transparent transistors with active layer thicknesses ranging from 15 nm to 60 nm were produced at room temperature using rf magnetron sputtering. Optical transmittance data in the visible range reveals average transmittance higher than 80%, including the glass substrate. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above 107 are achieved, but this value tends to be lower for devices with thicker semiconductor films, as a result of the decrease in the resistance of the channel region with increasing thickness. Channel mobilities are also quite respectable, with some devices presenting values around 40 cm2/V s, even without any annealing or other post-deposition improvement processes. Concerning the evolution of threshold voltage with the thickness, this work shows that it increases from about 3 V in thicker films up to about 10 V in the thinnest ones. The interesting electrical properties obtained and the versatility arising from the fact that it is possible to modify them changing only the thickness of the semiconductor makes this new transparent transistors quite promising for future transparent ICs. © 2006 Elsevier B.V. All rights reserved.

In this work we present a study concerning the influence of some of the most important external factors on the electrical properties of transparent thin-film transistors (TFTs), using zinc oxide produced at room temperature as the semiconductor material. Electrical characterization performed sixteen months after the production of the devices showed a decrease in the on/off ratio from 8×105 to 1×105, mainly due to the increase of the off-current. We also observed a small increase in the saturation mobility, a decrease in the threshold voltage and an increase in the gate voltage swing (by factors of about 1.2, 0.9 and 1.6, respectively). Exposure to ambient light does not have a noticeable effect on the electrical properties, which is an important point as regards the application of these devices in active matrix displays. Some variation of the electrical properties was only detectable under intense white light radiation. In order to evaluate the temperature effect on the TFTs, they were also characterized at 90 °C. At this temperature we noticed that the off-current increased more than two times, and the other electrical properties had a small variation, returning to their initial values after cooling, meaning that the process is totally reversible. © 2005 Elsevier Ltd. All rights reserved.