Publications

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Book
Baquinha, Pedro, Rodrigo Martins, Luis Pereira, and Elvira Fortunato Transparent Oxide Electronics. Wiley, 2012.
Conference Paper
Martins, R., B. Brás, I. Ferreira, L. Pereira, P. Barquinha, N. Correia, R. Costa, T. Busani, A. Gonçalves, A. Pimentel, and E. Fortunato. "{Away from silicon era: the paper electronics}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 7940. 2011. 79400P–10. Abstract
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Martins, R., L. Pereira, P. Barquinha, N. Correia, G. Gonçalves, I. Ferreira, C. Dias, and E. Fortunato. "{Floating gate memory paper transistor}." Eds. Ferechteh H. Teherani, David C. Look, Cole W. Litton, and David J. Rogers. Vol. 7603. 2010. 760314–11. Abstract
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Fortunato, E., Nuno Correia, Pedro Barquinha, Cláudia Costa, Lu\'ıs Pereira, Gonçalo Gonçalves, and Rodrigo Martins. "{Paper field effect transistor}." Eds. Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. Vol. 7217. 2009. 72170K–11. Abstract
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Martins, R., Luisa Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. GONCALVES, A. Goncalves, and E. Fortunato. "{Zinc oxide and related compounds: order within the disorder}." Eds. Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. Vol. 7217. 2009. 72170B–13. Abstract
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Schmeisser, Dieter, Joerg Haeberle, Pedro Barquinha, Diana Gaspar, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electronic structure of amorphous ZnO films}." {PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10}. Eds. M. {Godlewski, and A. } Zakrzewski. Vol. {11}. {Physica Status Solidi C-Current Topics in Solid State Physics}, {11}. Submitted. {1476-1480}. Abstract

{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}

Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Martins, R., V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato. "{P-type oxide-based thin film transistors produced at low temperatures}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826315–15. Abstract
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Journal Article
Barquinha, P., Fortunato, E., Goncalves, and A. "{A study on the electrical properties of ZnO based transparent TFTs}." 514-516 (2006): 68-72. AbstractWebsite
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Pereira, L., D. Brida, E. Fortunato, I. Ferreira, H. Águas, V. Silva, M. F. M. Costa, V. Teixeira, and R. Martins. "{a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates}." Journal of Non-Crystalline Solids. 299-302 (2002): 1289-1294. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis. "{Advanced materials for the next generation of thin film transistors}." (2007): 371-373. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins. "{Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs}." physica status solidi (RRL) – Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite
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Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
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Branquinho, Rita, Daniela Salgueiro, Lidia Santos, Pedro Barquinha, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "{Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs}." {ACS APPLIED MATERIALS & INTERFACES}. {6} (Submitted): {19592-19599}. Abstract

{Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm(2) V-1 s(-1).}

Raniero, L, Aguas, H, and Pereira. "{Batch processing method to deposit a-Si : H films by PECVD}." 455-456 (2004): 104-107. AbstractWebsite
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Zhang, S., L. Pereira, Z. Hu, L. Ranieiro, E. Fortonato, I. Ferreira, and R. Martins. "{Characterization of nanocrystalline silicon carbide films}." Journal of Non-Crystalline Solids. 352 (2006): 1410-1415. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
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Martins, Rodrigo, Arokia Nathan, Raquel Barros, Lu\'ıs Pereira, Pedro Barquinha, Nuno Correia, Ricardo Costa, Arman Ahnood, Isabel Ferreira, and Elvira Fortunato. "{Complementary metal oxide semiconductor technology with and on paper.}." Advanced materials (Deerfield Beach, Fla.). 23 (2011): 4491-6. AbstractWebsite
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Zanarini, Simone, Nadia Garino, Jijeesh Ravi Nair, Carlotta Francia, Pawel Jerzy Wojcik, Luis Pereira, Elvira Fortunato, Rodrigo Martins, Silvia Bodoardo, and Nerino Penazzi. "{Contrast Enhancement in Polymeric Electrochromic Devices Encompassing Room Temperature Ionic Liquids}." {INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE}. {9} (Submitted): {1650-1662}. Abstract

{We report the preparation and spectro-electrochemical characterization of electrochromic devices (ECD) combining inkjet-printed WO3 as cathode and electro-deposited V2O5 as anode. ECD were prepared for the first time with an optimized formulation of gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol) methyl ether methacrylate (BEMA/PEGMA) encompassing the Room Temperature Ionic Liquid (RTIL, 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) as solvent. The UV-VIS spectrum of ECD was recorded at different potentials during Li+ insertion and de-insertion; additionally the Percent Trasmittance (T%) of ECD vs. time was investigated during repeated bleaching and coloring cycles allowing thus the estimation of switching times and device stability. Due to the lower ionic conductivity and the apparent superior solvent permeability within WO3 active layer, RTIL containing ECD showed slower switching times, but higher contrast with respect to the similar ones with EC/DEC as solvent. These results indicate that the ECD containing environment-friendly RTIL electrolytes are suitable for applications requiring high contrast, high safety and moderately fast switching times.}

Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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