Publications

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2004
Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering}." Surface and Coatings Technology. 180-181 (2004): 20-25. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Next generation of thin film transistors based on zinc oxide}." 811 (2004): 347-352. AbstractWebsite
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Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}." Materials Science and Engineering: B. 109 (2004): 89-93. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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Fortunato, Elvira M. C., Pedro M. C. Barquinha, Ana C. M. B. G. Pimentel, Alexandra M. F. Gonçalves, António J. S. Marques, Rodrigo F. P. Martins, and Luis M. N. Pereira. "{Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature}." Applied Physics Letters. 85 (2004): 2541. AbstractWebsite
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Fortunato, E, Assuncao, V, Marques, and A. "{ZnO : Ga thin films produced by RF sputtering at room temperature: Effect of the power density}." 455-456 (2004): 12-15. AbstractWebsite
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Barquinha, P., L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering}." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
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"{Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes}." Journal of Non-Crystalline Solids. 338-340 (2004): 810-813. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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"{Role of the rf frequency on the structure and composition of polymorphous silicon films}." Journal of Non-Crystalline Solids. 338-340 (2004): 183-187. AbstractWebsite
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"{Effect of the discharge frequency and impedance on the structural properties of polymorphous silicon}." Thin Solid Films. 451-452 (2004): 264-268. AbstractWebsite
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LGUAS, H. "{Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes}." Thin Solid Films. 451-452 (2004): 361-365. AbstractWebsite
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Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
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Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
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Ferreira, I. "{Properties of a-Si:H intrinsic films produced by HWPA-CVD technique}." Thin Solid Films. 451-452 (2004): 366-369. AbstractWebsite
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Fortunato, Elvira, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "{Flexible position sensitive photodetectors based on a-Si:H heterostructures}." Sensors and Actuators A: Physical. 116 (2004): 119-124. AbstractWebsite
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2005
Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
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Aguas, H, Pereira, L, and Raniero. "{Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors}." 862 (2005): 691-696. AbstractWebsite
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Raniero, L, Goncalves, A, and Pimentel. "{Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides}." 862 (2005): 543-548. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors}." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite
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Pereira, L, Beckers, M, Martins, and RMS. "{Optimization of the metal/silicon ratio on nickel assisted crystallization of amorphous silicon}." 869 (2005): 45-50. AbstractWebsite
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