Publications

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2008
Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry}." Journal of Non-Crystalline Solids. 354 (2008): 2319-2323. AbstractWebsite
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs}." Electrochemical and Solid-State Letters. 11 (2008): H248. AbstractWebsite
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Barquinha, P., A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, and E. Fortunato. "{The role of source and drain material in the performance of GIZO based thin-film transistors}." physica status solidi (a). 205 (2008): 1905-1909. AbstractWebsite
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Martins, Rodrigo, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "{Write-erase and read paper memory transistor}." Applied Physics Letters. 93 (2008): 203501. AbstractWebsite
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2007
Martins, R., N. Schell, R. Silva, L. Pereira, K. MAHESH, and F. FERNANDES. "{In-situ study of Ni–Ti thin film growth on a TiN intermediate layer by X-ray diffraction}." Sensors and Actuators B: Chemical. 126 (2007): 332-337. AbstractWebsite
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Barquinha, P., G. Gonçalves, L. Pereira, R. Martins, and E. Fortunato. "{Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs}." Thin Solid Films. 515 (2007): 8450-8454. AbstractWebsite
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Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
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Martins, R., P. Barquinha, L. Pereira, I. Ferreira, and E. Fortunato. "{Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors}." Applied Physics A. 89 (2007): 37-42. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins. "{Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs}." physica status solidi (RRL) – Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Pereira, L., R. M. S. Martins, N. Schell, E. Fortunato, and R. Martins. "{Corrigendum to “Nickel assisted metal induced crystallization of silicon: Effect of native silicon oxide layer” [Thin Solid Films 511–512 (2006) 275–279]}." Thin Solid Films. 516 (2007): 104-105. AbstractWebsite
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Martins, R., P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, and E. Fortunato. "{Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors}." Journal of Applied Physics. 101 (2007): 044505. AbstractWebsite
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2006
Pereira, L., H. Águas, E. Fortunato, and R. Martins. "{Nanostructure characterization of high k materials by spectroscopic ellipsometry}." Applied Surface Science. 253 (2006): 339-343. AbstractWebsite
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Zhang, S., L. Pereira, Z. Hu, L. Ranieiro, E. Fortonato, I. Ferreira, and R. Martins. "{Characterization of nanocrystalline silicon carbide films}." Journal of Non-Crystalline Solids. 352 (2006): 1410-1415. AbstractWebsite
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Barquinha, P., A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato. "{Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide}." Journal of Non-Crystalline Solids. 352 (2006): 1756-1760. AbstractWebsite
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Martins, R., P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferreira, and E. Fortunato. "{Electron transport and optical characteristics in amorphous indium zinc oxide films}." Journal of Non-Crystalline Solids. 352 (2006): 1471-1474. AbstractWebsite
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Pereira, L., L. Raniero, P. Barquinha, E. Fortunato, and R. Martins. "{Impedance study of the electrical properties of poly-Si thin film transistors}." Journal of Non-Crystalline Solids. 352 (2006): 1737-1740. AbstractWebsite
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Barquinha, P., A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato. "{Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide}." Journal of Non-Crystalline Solids. 352 (2006): 1749-1752. AbstractWebsite
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Spectroscopic ellipsometry study of nickel induced crystallization of a-Si}." Journal of Non-Crystalline Solids. 352 (2006): 1204-1208. AbstractWebsite
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Raniero, L., I. Ferreira, L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Study of nanostructured silicon by hydrogen evolution and its application in p–i–n solar cells}." Journal of Non-Crystalline Solids. 352 (2006): 1945-1948. AbstractWebsite
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Barquinha, P., E. Fortunato, A. Gonçalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins. "{Influence of time, light and temperature on the electrical properties of zinc oxide TFTs}." Superlattices and Microstructures. 39 (2006): 319-327. AbstractWebsite
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Martins, R. M. S., F. M. {Braz Fernandes}, R. J. C. Silva, L. Pereira, P. R. Gordo, M. J. P. Maneira, M. Beckers, A. Mücklich, and N. Schell. "{The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-Ti SMA magnetron sputtered thin films}." Applied Physics A. 83 (2006): 139-145. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Low temperature processed hafnium oxide: Structural and electrical properties}." Materials Science in Semiconductor Processing. 9 (2006): 1125-1132. AbstractWebsite
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Fortunato, E., Goncalves, A., and Marques. "{Multifunctional thin film zinc oxide semiconductors: Application to electronic devices}." 514-516 (2006): 3-7. AbstractWebsite
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