Publications

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Journal Article
Martins, R., I. Ferreira, A. Cabrita, and E. Fortunato. "Improvement of a-Si: H device stability and performances by proper design of the interfaces." Journal of Non-Crystalline Solids. 266 (2000): 1094-1098. Abstract
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Carvalho, C., JMM De Nijs, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-p Interface In a-SI: H Solar Cells Using a Thin SiO Intermediate Layer." MRS Proceedings. 426.1 (1996). Abstract
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Nunes de Carvalho, C., JMM De Nijs, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-p Interface in a-Si: H solar cells using a thin SiO Intermediate Layer." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 426 (1996): 25-30. Abstract
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Nijs, JMM De, I. Ferreira, E. Fortunato, and R. Martins. "Improvement of the ITO-P Interface in a-Si: H Solar Cells Using a Thin SiO Intermediate Layer." MRS Proceedings. 420.1 (1996). Abstract
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Zeman, M., I. Ferreira, MJ Geerts, and JW Metselaar. "The influence of deposition parameters on the growth of a-SiGe: H alloys in a plasma CVD system." Applied Surface Science. 46.1 (1990): 245-248. Abstract
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Braz Fernandes, Francisco Manuel, Isabel Ferreira, Rodrigo Martins, Paula M. Vilarinho, and Elvira Fortunato. "Influence of Hydrogen Gas Dilution on the Properties of Silicon-Doped Thin Films Prepared by the Hot-Wire Plasma-Assisted Technique." Key Engineering Materials. 230 (2002): 591-594. Abstract
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Raniero, L., A. Gonçalves, A. Pimentel, I. Ferreira, S. Zhang, L. Pereira, H. Aguas, E. Fortunato, and R. Martins. "Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides." MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. 862 (2005): 543. Abstract
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Assuncao, V., E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." Thin Solid Films. 427.1 (2003): 401-405. Abstract
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Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins. "INFLUENCE OF THE H 2 DILUTION AND FILAMENT TEMPERATURE ON THE." (Submitted). Abstract
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Ferreira, I., H. Aguas, L. Mendes, F. FERNANDES, E. Fortunato, and R. Martins. "Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique." MRS Proceedings. 507.1 (1998). Abstract
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Raniero, L., N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins. "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell." Solar energy materials and solar cells. 87.1 (2005): 349-355. Abstract
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Gaspar, D., AC Pimentel, T. Mateus, JP Leitão, J. Soares, BP Falcão, A. Araújo, A. Vicente, SA Filonovich, and H. Aguas. "Influence of the layer thickness in plasmonic gold nanoparticles produced by thermal evaporation." Scientific reports. 3 (2013). Abstract
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Fortunato, Elvira, Patricia Nunes, Antonio Marques, Daniel Costa, Hugo Águas, Isabel Ferreira, M. E. V. Costa, Maria H. Godinho, Pedro L. Almeida, and Joao P. Borges. "Influence of the strain on the electrical resistance of zinc oxide doped thin film deposited on polymer substrates." Advanced Engineering Materials. 4.8 (2002): 610-612. Abstract
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Soares, Fernanda, António Marques, Isabel Ferreira, Rodrigo Martins, Hugo Águas, Elvira Fortunato, PMR Borges, Daniel Costa, Sergio Pereira, and Leandro Raniero. "Insights on amorphous silicon nip and MIS 3D position sensitive detectors." Materials science forum. 514 (2006): 13-17. Abstract
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Prabakaran, R., L. Silva, E. Fortunato, R. Martins, and I. Ferreira. "Investigation of hydrocarbon coated porous silicon using PECVD technique to detect CO< sub> 2 gas." Journal of Non-Crystalline Solids. 354.19 (2008): 2610-2614. Abstract
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Martins, R., A. Macarico, I. Ferreira, R. Nunes, A. Bicho, and E. Fortunato. "Investigation of the amorphous to microcrystalline phase transition of thin film silicon produced by PECVD." Thin solid films. 317.1 (1998): 144-148. Abstract
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