Zinc oxide thin films deposited by rf magnetron sputtering on mylar substrates at room temperature
- Citation:
- Fortunato, E.a, Nunes Marques Costa Águas Ferreira Costa Martins P. a A. a. "Zinc oxide thin films deposited by rf magnetron sputtering on mylar substrates at room temperature." Materials Research Society Symposium Proceedings. Vol. 685. 2001. 140-145.
Abstract:
Aluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×102 Ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices. © 2001 Materials Research Society.
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