Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering
- Citation:
- Nunes, P., Costa Fortunato Martins D. E. R. "Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering." Vacuum. 64 (2002): 293-297.
Abstract:
In this work, we report the electro-optical properties exhibited by ZnO:A1 thin films deposited by r.f. magnetron sputtering. The effect of the deposition parameters on the properties of the films were studied with the aim to determine the most suitable deposition conditions to obtain ZnO:Al thin films with a low resistivity and high transmittance, characteristics required for applications on optoelectronic devices. After annealing, the ZnO:Al thin films present a low resistivity (6.25 × 10-3 Ωcm) and a high transmittance (90%) when produced with a deposition pressure of 1.6 × 10-2 mbar and r.f. power of 150W. © 2002 Elsevier Science Ltd. All rights reserved.
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