In the present work, we investigate the influence of hydrocarbon (CHx) thin film coating on porous silicon (PS) by plasma enhanced chemical vapor deposition (PECVD) technique to detect CO2 gas. The fabricated CHx/PS heterojunction device shows up to one and two orders of magnitude enhancement in current under CO2 gas exposure. FTIR spectroscopy measurements reveal a remarkable structural modification of the CHx/PS device during CO2 gas exposure. Further, the enhancement of CHx related absorbance bands by a factor 6.2 for the CHx/PS specimen in comparison with PS confirm the good quality of the deposited CHx thin films. © 2007 Elsevier B.V. All rights reserved.
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