Insight on the SU-8 resist as passivation layer for transparent Ga 2 O3 - In2 O3-ZnO thin-film transistors
- Citation:
- c Olziersky, A.a, Barquinha Vil̀ Pereira Goņalves Fortunato Martins Morante P. b A. a. "Insight on the SU-8 resist as passivation layer for transparent Ga 2 O3 - In2 O3-ZnO thin-film transistors." Journal of Applied Physics. 108 (2010).
Abstract:
{A nonvacuum and low temperature process for passivating transparent metal oxides based thin-film transistors is presented. This process uses the epoxy-based SU-8 resist which prevents device degradation against environmental conditions, vacuum or sputtering surface damage. The incorporation of SU-8 as a passivation layer is based on the ability of this polymer to provide features with high mechanical and chemical stability. With this approach, lithography is performed to pattern the resist over the active area of the device in order to form the passivation layer. The resulting transistors demonstrate very good electrical characteristics, such as μFE =61 cm2 /V s
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