Rodrigo Martins

Citation:

Wang, J.c, Sallet Amiri Rommelluere Lusson Rzepka Lewis Galtier Fortunato Martins Gorochov V. a G. a. "Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film." Physica Status Solidi C: Conferences. Vol. 3. 2006. 1010-1013.

Abstract:

Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H 2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436cm-1 and its PL spectrum appears a shoulder at 3.367eV on the higher energy side. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.

Notes:

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