High mobility indium free amorphous oxide based thin film transistors
- Citation:
- Fortunato, E.a, Pereira Barquinha Botelho Do Rego Gongalves Vilà Morante Martins L. a P. a. "High mobility indium free amorphous oxide based thin film transistors." Proceedings of International Meeting on Information Display. Vol. 8. 2008. 1199-1202.
Abstract:
High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (200 °C, 250 °C and 300 °C) was evaluated and compared with two series of TFTs produced at room temperature and 150 °C during the channel deposition. From the results it was observed that the effect ofpos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of 24.6 cm2/Vs, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an ION/IOFF ratio of 8x107, satisfying all the requirements to be used in active-matrix backplane.
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