High field-effect mobility zinc oxide thin film transistors produced at room temperature
- Citation:
- Fortunato, E., Pimentel Pereira Gonçalves Lavareda Águas Ferreira Carvalho Martins A. L. A. "High field-effect mobility zinc oxide thin film transistors produced at room temperature." Journal of Non-Crystalline Solids. 338-340 (2004): 806-809.
Abstract:
In this paper we present the first results of thin film transistors produced completely at room temperature using ZnO as the active channel and silicon oxynitride as the gate dielectric. The ZnO-based thin film transistors (ZnO-TFT) present an average optical transmission (including the glass substrate) of 84% in the visible part of the spectrum. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 1.8 V. A field effect mobility of 70 cm2/Vs, a gate voltage swing of 0.68 V/decade and an on-off ratio of 5×105 were obtained. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT very promising for the next generation of invisible and flexible electronics. © 2004 Elsevier B.V. All rights reserved.
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