Electron paramagnetic resonance of defects in doped microcrystalline silicon
- Citation:
- Lavado, M., Martins Ferreira Lavareda Fortunato Vieira Guimarães R. I. G. "Electron paramagnetic resonance of defects in doped microcrystalline silicon." Vacuum. 39 (1989): 791-794.
Abstract:
Experimental results on structure defects in microcrystalline (μc) n- and p-doped μc-S1-x:Cx:H films deposited on alkali-free glass substrates by spatial plasma separation1 and obtained by electron paramagnetic resonance (EPR) are presented. The technique used for subtracting the substrate effect on recorded spectra is also discussed as well as its quantification. The microscopic structure of intrinsic defects and impurity states and their role in transport mechanisms are studied and correlated with the composition of their films. These results are also related to transport properties of deposited films in order to observe the role of dopant centres, located at conduction band tails, in controlling the electrical properties. © 1989.
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