Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors
- Citation:
- Águas, H., Pereira Raniero Fortunato Martins L. L. E. "Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors." Materials Research Society Symposium Proceedings. Vol. 862. 2005. 691-696.
Abstract:
It is experimentally known that the linearity and sensitivity of the position sensitive detectors (PSD) are dependent on the resistance of the collecting layer and of the load resistance, mainly if the detection is based on the measurement of the photo-lateral voltage. To determine the value of the load resistance to be used in metal - insulator - semiconductor (MIS) PSDs structures that lead to the maximum value of sensitivity and linearity, we propose an electrical model through which it is able to simulate the proper sensor response and how the load resistance influence the results obtained. This model is valid for PSDs where the resistance of the collecting resistive layer is quite low (≤ 500 Ω), leading to a low output impedance. Under these conditions we conclude that the value of the load resistance should be of about 1 kΩ in order to achieve a good compromise between the linearity and the sensitivity of the PSD. This result is in agreement with the set of experiments performed. © 2005 Materials Research Society.
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