Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes
- Citation:
- Águas, H.a, Pereira Ferreira Ramos Viana Andreu Vilarinho Fortunato Martins L. a I. a. "Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes." Journal of Non-Crystalline Solids. 338-340 (2004): 810-813.
Abstract:
This work presents a study on the effect of an interfacial silicon oxide layer placed between Au and a-Si:H MIS (metal-insulator-semiconductor) photodiodes in their performances, by stopping the Au diffusion towards the a-Si:H. The results show that the Au diffuses very easily to the oxide free a-Si:H surface, even at room temperature, degrading the photodiode performance. On the other hand, the MIS photodiodes with the interfacial oxide show an improvement of their characteristics after annealing, function of its thickness, and degree of film's compactness. This effect is associated with the presence of oxide of thicknesses ≥5 Å at the Au/a-Si:H interface that prevents the Au diffusion and improves the photodiode characteristics, which does not happen when the interfacial oxide is absent. © 2004 Elsevier B.V. All rights reserved.
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